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data sheet 1 of 12 rev. 04, 2008-02-13 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! dab drive-up at 28 volts 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 output power (w) average drain efficiency (%) -55 -50 -45 -40 -35 -30 -25 -20 spectral regrowth (dbc) efficiency regrowth v dd = 28 v, f = 1500 mhz, i dq = 1.5 a, dab mode 2 PTF141501E description the PTF141501E is a 150-watt, goldmo s ? fet intended for dab applications. this device is characterized for digital audio broadcast operation in the 1450 to 1500 mhz band. thermally-enhanced packaging provides the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. PTF141501E package h-30260-2 thermally-enhanced high power rf ldmos fet 150 w, 1450 ? 1500 mhz, 1600 ? 1700 mhz rf characteristics dab measurements (not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 32 v, i dq = 1.5 a, p out = 50 w avg , f = 1500 mhz, dab mode 2, f c d 975 khz characteristic symbol min typ max unit spectral regrowth rgth ? ?30 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 29 ? % features ? thermally-enhanced package, pb-free and rohs-compliant ? broadband internal matching ? typical dab mode 2 performance at 1500 mhz, 32 v - average output power = 50 w - efficiency = 28% - spectral regrowth = ?30 dbc - d 975 khz f c ? typical dab mode 2 performance at 1500 mhz, 28 v - average output power = 40 w - efficiency = 26% - spectral regrowth = ?31 dbc - d 975 khz f c ? typical cw performance, 1500 mhz, 28 v - minimum output power = 150 w - linear gain = 16.5 db - efficiency = 48% at p?1db ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr at 28 v, 150 w (cw) output power *see infineon distributor for future availability.
data sheet 2 of 12 rev. 04, 2008-02-13 PTF141501E rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 1.5 a, p out = 150 w pep , f = 1500 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 15.0 16.5 ? db drain efficiency h d 35 ? ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i d = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 1.5 a v gs 2.5 3.3 4.0 v gate leakage current v gs = +10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 438 w above 25c derate by 2.5 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c) r q jc 0.4 c/w ordering information type package outline package description marking PTF141501E h-30260-2 thermally-enhanced slotted flange, single-ended PTF141501E *see infineon distributor for future availability.
data sheet 3 of 12 rev. 04, 2008-02-13 PTF141501E typical performance dab drive-up at 32 volts v dd = 32, i dq = 1.5 a, f = 1500 mhz, dab mode 2 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 output power (w) average drain efficiency (%) . -55 -50 -45 -40 -35 -30 -25 -20 spectral regrowth (dbc) efficiency regrowth cw sweep in a broadband test fixture v dd = 28 v, i dq = 1.5 a, p out (cw) = 30 w 0 5 10 15 20 25 30 1400 1450 1500 1550 1600 frequency (mhz) -30 -25 -20 -15 -10 -5 0 input return loss (db) gain drain efficiency return loss gain (db) and drain efficiency (%) . cw sweep for varying bias conditions v dd = 28 v, f = 1500 mhz 14 15 16 17 1 10 100 1000 output power (w) cw gain (db) i dq = 1.2 a i dq = 0.6 a i dq = 0.9 a i dq = 1.5 a intermodulation distortion products vs. output power v dd = 28, i dq = 1.5 a, f = 1.5 ghz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 0 20 40 60 80 100 output power (w) average 5 15 25 35 45 drain efficiency (%) . drain efficiency im3 im5 im7 intermodulation distortion (dbc)
data sheet 4 of 12 rev. 04, 2008-02-13 PTF141501E intermodulation distortion vs. output power for various i dq -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 0 50 100 150 output power (w) average im3 (dbc) v dd = 28, f = 1.5 ghz i dq = 1.5 a i dq = 1.7 a i dq = 1.9 a i dq = 1.1 a i dq = 1.3 a bias voltage vs. temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 case temperature (oc) normalized bias voltage 0.90 a 2.10 a 4.50 a 7.50 a 10.50 a 13.50 a voltage normalized to typical gate voltage. series show current. broadband circuit impedance, 1500 mhz z source z load g s d frequency z source w z load w mhz r jx r jx 1400 5.00 ?6.70 0.94 1.27 1450 4.50 ?5.90 0.90 1.73 1500 4.20 ?5.10 0.86 2.21 1550 3.90 ?4.30 0.82 2.60 1600 3.70 ?3.70 0.80 3.05 typical performance (cont.) 0.1 0.2 0 . 1 0 . 1 d g e n e - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1400 mhz 1400 mhz 1600 mhz z load z source 1600 mhz z 0 = 50 w
data sheet 5 of 12 rev. 04, 2008-02-13 PTF141501E 141501a-1500_sch rf_out q1 r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 5.1k 10f 35v c4 10 r6 v 0.1f c5 r7 l 6 v 7.5pf c6 l 7 c11 1f 13pf c10 l1 35v c12 0.1f c13 10f v dd l 4 l 3 l 2 l 1 0.3pf c8 c9 2.4pf c7 33pf l 11 l 10 l 14 l 13 l 12 l 9 l 5 c14 l 8 c15 c18 0.7pf l2 c16 c17 c20 0.3pf dut c19 33pf 10f 35v 13pf 1f 0.1f r5 5.1k v rf_in reference circuit for 1500 mhz reference circuit schematic for 1500 mhz circuit assembly information dut PTF141501E ldmos transistor pcb 0.76 mm [0.030"] thick, e r = 4.5 tmm4 2 oz. copper, both sides microstrip electrical characteristics at 1500 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.043 l, 50 .0 w 4.67 x 1.47 0.185 x 0.058 l 2 0.118 l, 42.0 w 12.70 x 1.85 0.500 x 0.073 l 3 0.015 l, 42.0 w 1.57 x 1.85 0.062 x 0.073 l 4 0.012 l, 14.7 w 1.22 x 7.57 0.048 x 0.298 l 5 0.052 l, 8.0 w 5.08 x 15.19 0.200 x 0.598 l 6 0.182 l, 60.0 w 20.17 x 0.97 0.794 x 0.038 l 7 0.283 l, 63.0 w 31.45 x 0.89 1.238 x 0.035 l 8 0.283 l, 63.0 w 31.45 x 0.89 1.238 x 0.035 l 9 0.026 l, 4.6 w 2.46 x 27.89 0.097 x 1.098 l 10 0.086 l, 4.6 w 8.23 x 27.89 0.324 x 1.098 l 11 0.061 l, 9.4 w 5.97 x 12.62 0.235 x 0.497 l 12 0.011 l, 50.0 w 1.14 x 1.47 0.045 x 0.058 l 13 0.056 l, 50.0 w 6.10 x 1.47 0.240 x 0.058 l 14 0.010 l, 50.0 w 1.07 x 1.47 0.042 x 0.058 1 electrical characteristics are rounded.
data sheet 6 of 12 rev. 04, 2008-02-13 PTF141501E 141501ef-1500_assy c14 c15 10 35v + lm 10 35v + 10 35v + c4 c5 r6 r7 c1 c10 c6 c19 c7 r1 c13 c17 c9 r4 r5 rf_in rf_out c16 c11 qq1 l1 r3 q1 c20 c8 c2 c3 v dd r2 c18 c12 v dd v dd l2 reference circuit for 1500 mhz (cont.) reference circuit (not to scale)* component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f, 50 v, 0603 digi-key pcc1772ct-nd c4, c13, c17 capacitor, 10 f, 35 v, smd digi-key pcs6106tr-nd, tant. te series c5, c12, c16 capacitor, 0.1 f, 50 v, 1206 digi-key p4525-nd c6 capacitor, 7.5 pf atc 100a 7r5 c7 capacitor, 33 pf atc 100a 330 c8 capacitor, 0.3 pf atc 100a 0r3 c9 capacitor, 2.4 pf atc 100a 2r4 c10, c14 capacitor, 13 pf atc 100b 130 c11, c15 capacitor, 1 f, 50 v digi-key 19528-nd c18 capacitor, 0.7 pf atc 100b 0r7 c19 capacitor, 33 pf atc 100b 330 c20 capacitor, 0.3 pf atc 100b 0r3 l1, l2 ferrite, 6 mm philips 53/3/4.6-452 q1 transistor infineon bcp56 qq1 voltage regulator digi-key lm7805 r1 resistor, 1.2 k-ohms, 1/10 w, 0603 digi-key p1.2kgct-nd r2 resistor, 1.3 k-ohms, 1/10 w, 0603 digi-key p1.3kgct-nd r3 resistor, 2 k-ohms, 1/10 w, 0603 digi-key p2kgct-nd r4 potentiometer, 2 k-ohms, 0.25 w digi-key 3224w-202etr-nd r5, r7 resistor, 5.1 k-ohms, 1/4 w, 1206 digi-key p5.1kect-nd r6 resistor, 10 ohms, 1/4 w, 1206 digi-key p10ect-nd *gerber files for this circuit are available on request. 141501ef-1500_dtl 10 35v + lm c4 c5 r6 r7 c1 c6 r1 r4 r5 qq1 r3 q1 c2 c3 v dd r2
data sheet 7 of 12 rev. 04, 2008-02-13 PTF141501E alternate application for 1600 mhz typical performance cw power sweep (1600 mhz application circuit) v dd = 28 v, i dq = 1.2 a, f = 1675 mhz 13 14 15 16 17 0 20 40 60 80 100 120 140 160 180 output power (w) gain (db) 0 10 20 30 40 50 drain efficiency (%) efficiency gain frequency sweep, 1.6 ? 1.7 ghz v dd = 28 v, i dq = 1.2 a 13 14 15 16 17 1580 1600 1620 1640 1660 1680 1700 1720 frequency (mhz) gain (db) 2-tone drive-up at optimum current v dd = 28 v, i dq = 1.2 a, f 1 = 1675 mhz, f 2 = 1676 mhz -70 -60 -50 -40 -30 -20 -10 0 0 20 40 60 80 100 output power (w) average imd (dbc) 0 5 10 15 20 25 30 35 3rd order 7th 5th efficiency
data sheet 8 of 12 rev. 04, 2008-02-13 PTF141501E frequency z source w z load w mhz r jx r jx 1600 9.5 ?5.6 0.9 ?5.8 1625 9.6 ?5.2 0.8 ?5.4 1650 9.8 ?5.0 0.8 ?5.2 1675 9.9 ?4.7 0.8 ?5.0 1700 10.0 ?4.4 0.8 ?4.8 broadband circuit impedance, 1600 mhz see next page for alternate reference circuit, 1600 mhz z source z load g s d 0.1 0.3 0.5 0.2 0.4 0 . 1 - w a v < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1700 mhz 1700 mhz 1600 mhz z load z source 1600 mhz z 0 = 50 w
data sheet 9 of 12 rev. 04, 2008-02-13 PTF141501E l 1 141501a-1600_sch c14 dd v c9 + c8 c7 l1 l 13 c10 l 11 l 12 + c13 c12 l2 c6 c3 r2 l 10 l 7 dut l 9 c11 l 8 l 6 l 5 l 4 l 3 10 v c2 r1 c1 + c4 l 2 rf_in v dd c5 r7 c20 c19 r4 c18 l m 7 8 0 5 r3 q1 qq1 r6 r5 10f 35v 10f 35v 1f 1f 7.5pf 0.1f 0.1f 13pf 5.1k v 7.5pf 13pf 0.1f 15pf 10f 35v 1.7pf 3.3k v 0.001f 0.001f bcp56 1.3k v 1.2k v 0.001f 24k v 10k v rf_out reference circuit schematic for 1600 mhz reference circuit for 1600 mhz circuit assembly information dut PTF141501E ldmos transistor pcb 0.76 mm [0.030"] thick, e r = 4.5 tmm4 2 oz. copper, both sides microstrip electrical characteristics 1 at 1500 mhz dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.043 l, 50.0 w 4.67 x 1.47 0.185 x 0.058 l 2 0.065 l, 42.0 w 6.73 x 1.85 0.265 x 0.073 l 3 0.065 l, 42.0 w 6.73 x 1.85 0.265 x 0.073 l 4 0.012 l, 14.7 w 1.22 x 7.57 0.048 x 0.298 l 5 0.052 l, 8.0 w 5.08 x 15.19 0.200 x 0.598 l 6 0.182 l, 60.0 w 20.17 x 0.97 0.794 x 0.038 l 7 0.283 l, 63.0 w 31.45 x 0.89 1.238 x 0.035 l 8 0.283 l, 63.0 w 31.45 x 0.89 1.238 x 0.035 l 9 0.112 l, 4.6 w 10.67 x 27.89 0.420 x 1.098 l 10 0.016 l, 9.4 w 1.52 x 27.89 0.060 x 0.497 l 11 0.053 l, 34.0 w 5.72 x 12.62 0.225 x 0.100 l 12 0.011 l, 50.0 w 1.14 x 1.47 0.045 x 0.058 l 13 0.066 l, 50.0 w 7.17 x 1.47 0.282 x 0.058 1 electrical characteristics are rounded.
data sheet 10 of 12 rev. 04, 2008-02-13 PTF141501E reference circuit for 1600 mhz (cont.) component description suggested manufacturer p/n or comment c1, c9, c14 capacitor, 10 f, 35 v, tant. te series digi-key pcs6106tr-nd, smd c2, c8, c13 capacitor, 0.1 f, 50 v, 1206 digi-key p4525-nd c3 capacitor, 7.5 pf atc 100a 7r5 c4 capacitor, 15 pf atc 100b 150 c10 capacitor, 7.5 pf atc 100b 7r5 c5 capacitor, 1.7 pf atc 100b 1r7 c6, c11 capacitor, 13 pf atc 100b 130 c7, c12 capacitor, 1 f, 50 v digi-key 19528-nd c18, c19, c20 capacitor, 0.001 f, 50 v, 0603 digi-key pcc1772ct-nd l1, l2 ferrite, 6 mm philips 53/3/4.6-452 q1 transistor infineon bcp56 qq1 voltage regulator digi-key lm7805 r1 resistor, 10 ohms, 1/4w, 1206 digi-key p10ect-nd r2 resistor, 5.1 k-ohms, 1/4w, 1206 digi-key p5.1kect-nd r3 resistor, 1.2 k-ohms, 1/10w, 0603 digi-key p1.2kgct-nd r4 resistor, 1.3 k-ohms, 1/10w, 0603 digi-key p1.3kgct-nd r5 potentiometer, 10 k-ohms, 0.25w digi-key 3224w-103etr-nd r6 resistor, 24 k-ohms, 1/10w, 0603 digi-key p24kgct-nd r7 resistor, 3.3 k-ohms, 1/4w, 1206 digi-key p3.3kect-nd *gerber files for this circuit are available on request. reference circuit for 1600 mhz* (not to scale) 141501ef-1600_assy 10 35v + lm 10 35v + 10 35v + c1 c2 r1 r2 c18 c6 c3 c11 c12 c10 c4 r3 c9 c14 r4 r5 r7 rf_in rf_out c13 c7 qq1 l1 r6 q1 c8 c5 c19 c20 l1 v dd v dd v dd 141501ef-1600_dtl c1 c2 r1 r2 c18 c3 r3 r4 r5 r7 qq1 r6 c19 c20 v dd 10 35v + lm q1
data sheet 11 of 12 rev. 04, 2008-02-13 PTF141501E package outline specifications package h-30260-2 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. c l c l 260-cases_30260 / 11-15-07 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 34.04 [1.340] d s g flange 13.72 [.540] 45 x 2.03 [.080] sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] 27.94 [1.100] c l 1.02 [.040] +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006
data sheet 12 of 12 rev. 04, 2008-02-13 PTF141501E confidential ? limited internal distribution revision history: 2008-02-13 data sheet previous version: 2005-08-30 , data sheet page subjects (major changes since last revision) all remove references to alternate products. goldmos ? is a registered trademark of infineon technologies ag. edition 2008-02-13 published by infineon technologies ag 81726 munich , germany ? 2003 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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